Schedule 2 4:15 PM - 6:15 PM [Tu-P-27] Study on Leakage Current Conduction Mechanism at high temperature in Al2O3/SiO2/n-type 4H-SiC MOS Capacitors *Atsushi Tamura1, Masahiro Masunaga2, Shintaroh Sato2, Koji Kita1 (1. The Univ. of Tokyo(Japan), 2. Hitachi, Ltd. R&D Group(Japan))
