[Tu-P] Poster Presentation

[Tu-P-27] Study on Leakage Current Conduction Mechanism at high temperature in Al₂O₃/SiO₂/n-type 4H-SiC MOS Capacitors

*Atsushi Tamura¹, Masahiro Masunaga², Shintaroh Sato², Koji Kita¹ (1. The Univ. of Tokyo(Japan), 2. Hitachi, Ltd. R&D Group(Japan))