Tue. Oct 1, 2019 4:15 PM - 6:15 PMAnnex Hall 1 (Kyoto International Conference Center)
Schedule
1
4:15 PM - 6:15 PM
[Tu-P-32] Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC
*Carsten Hellinger1, Oleg Rusch1, Mathias Rommel1, Anton J. Bauer1, Tobias Erlbacher1(1. Fraunhofer Institute for Integrated Systems and Device Technology (IISB)(Germany))