2019年10月1日(火) 16:15 〜 18:15Annex Hall 1 (Kyoto International Conference Center)
スケジュール
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16:15 〜 18:15
[Tu-P-32] Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC
*Carsten Hellinger1, Oleg Rusch1, Mathias Rommel1, Anton J. Bauer1, Tobias Erlbacher1(1. Fraunhofer Institute for Integrated Systems and Device Technology (IISB)(Germany))