[Tu-P] Poster Presentation

[Tu-P-34] Al₂O₃/4H-SiC MOS interface characterization with different surface treatments

Isanka Udayani Jayawardhena¹, Ayayi Claude Ahyi¹, Tamara Isaacs-smith¹, Rahul Ramamurthy², Koushik Ramadoss², Chunkun Jiao², Dallas Morisette², Ryan Thorpe³, Leonard C. Feldman³, *Sarit Dhar¹ (1. Auburn Univ.(United States of America), 2. Purdue Univ.(United States of America), 3. Rutgers Univ.(United States of America))