Tue. Oct 1, 2019 4:15 PM - 6:15 PMAnnex Hall 1 (Kyoto International Conference Center)
Schedule
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4:15 PM - 6:15 PM
[Tu-P-36] Development of High-Quality Gate Oxides on 4H-SiC Using Atomic Layer Deposition
*Benjamin Renz1, Oliver James Vavasour1, Peter Michael Gammon1, Fan Li1, Guy William Clarke Baker1, Philip Mawby1, Vishal Ajit Shah1(1. Univ. of Warwick(UK))