[Tu-P] Poster Presentation

[Tu-P-36] Development of High-Quality Gate Oxides on 4H-SiC Using Atomic Layer Deposition

*Benjamin Renz¹, Oliver James Vavasour¹, Peter Michael Gammon¹, Fan Li¹, Guy William Clarke Baker¹, Philip Mawby¹, Vishal Ajit Shah¹ (1. Univ. of Warwick(UK))