[Tu-P] Poster Presentation

[Tu-P-43] Analyzing 4H-SiC JBS diodes by TCAD process simulation using accurate implantation conditions

*Jonas Buettner¹, Susanne Beuer¹, Silke Petersen¹, Tobias Erlbacher¹, Anton Bauer¹ (1. Fraunhofer Institute for Integrated Systems and Device Technology IISB(Germany))