Schedule 4 4:15 PM - 6:15 PM [Tu-P-51LN] GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layer by tri-halide vapor phase epitaxy *KAZUKUNI HARA1,2, Junji Ohara1, Daisuke Uematsu1, Shoichi Onda2 (1. DENSO Corp.(Japan), 2. Nagoya Univ.(Japan))
