ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[We-1A] Interface Defect Structures

Wed. Oct 2, 2019 8:45 AM - 10:15 AM Room A (Kyoto International Conference Center)

9:00 AM - 9:15 AM

[We-1A-02] The PbC (carbon dangling bond) center at 4H-SiC(0001)/SiO2 interface: An EDMR study

*Takahide Umeda1, Takuma Kobayashi2, Yu-ichro Matsushita2, Eito Higa1, Hiroshi Yano1, Mitsuru Sometani3, Shinsuke Harada3 (1. Univ. of Tsukuba(Japan), 2. Tokyo Inst. of Tech.(Japan), 3. AIST(Japan))