ICSCRM2019

講演情報

印刷

Oral Presentation

Packaging and Applications

[We-1B] High Temperature and IC

2019年10月2日(水) 08:45 〜 10:15 Annex Hall 2 (Kyoto International Conference Center)

08:45 〜 09:15

[We-1B-01(Invited)] High Temperature Gate Driving Technology with Galvanic Isolation for Integrated SiC Power Modules

*Zhong Chen1, A Mantooth1 (1. Department of Electrical Engineering, University of Arkansas(United States of America))