ICSCRM2019

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Oral Presentation

Growth and Wafer Manufacturing

[We-2B] 4H-homo-epitaxy

Wed. Oct 2, 2019 10:45 AM - 12:15 PM Annex Hall 2 (Kyoto International Conference Center)

11:30 AM - 11:45 AM

[We-2B-03] High Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhanced Buffer Layer for High Current Applications

*Hironori Itoh1, Taro Enokizono1, Takaya Miyase1, Tsutomu Hori1, Keiji Wada1, Hideyuki Doi1, Masaki Furumai1 (1. Sumitomo Electric Industries, Ltd.(Japan))