[We-2B] 4H-homo-epitaxy

[We-2B-03] High Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhanced Buffer Layer for High Current Applications

*Hironori Itoh¹, Taro Enokizono¹, Takaya Miyase¹, Tsutomu Hori¹, Keiji Wada¹, Hideyuki Doi¹, Masaki Furumai¹ (1. Sumitomo Electric Industries, Ltd.(Japan))