ICSCRM2019

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Oral Presentation

Growth and Wafer Manufacturing

[We-2B] 4H-homo-epitaxy

Wed. Oct 2, 2019 10:45 AM - 12:15 PM Annex Hall 2 (Kyoto International Conference Center)

11:45 AM - 12:00 PM

[We-2B-04] CVD parameters regulation for 4H-SiC trench fast-filling over 10 μm/h

*Shiyang Ji1, Ryoji Kosugi1, Kazutoshi Kojima1, Yoshiyuki Yonezawa1, Sadafumi Yoshida1, Hajime Okumura1 (1. AIST(Japan))