[We-2B] 4H-homo-epitaxy

[We-2B-04] CVD parameters regulation for 4H-SiC trench fast-filling over 10 μm/h

*Shiyang Ji¹, Ryoji Kosugi¹, Kazutoshi Kojima¹, Yoshiyuki Yonezawa¹, Sadafumi Yoshida¹, Hajime Okumura¹ (1. AIST(Japan))