ICSCRM2019

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Oral Presentation

Growth and Wafer Manufacturing

[We-2B] 4H-homo-epitaxy

Wed. Oct 2, 2019 10:45 AM - 12:15 PM Annex Hall 2 (Kyoto International Conference Center)

12:00 PM - 12:15 PM

[We-2B-05] Low temperature homoepitaxy of 4H-SiC with extremely high levels of electrically active dopants on off- and on-axis substrates

*Maksym Myronov1, Gerard Colston2, Stephan Wirths3 (1. The University of Warwick(UK), 2. Advanced Epi Materials and Devices Ltd(UK), 3. ABB Switzerland Ltd(Switzerland))