ICSCRM2019

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Oral Presentation

Power and High-Frequency Devices

[We-3A] Diodes and Processing

Wed. Oct 2, 2019 1:45 PM - 3:45 PM Room A (Kyoto International Conference Center)

2:30 PM - 2:45 PM

[We-3A-04] Photoluminescence analysis of a forward-biased SiC SWITCH-MOS under various stress conditions

*Masakazu Baba1, Yusuke Kobayashi1, Manabu Takei2, Hiroshi Kimura2, Shinsuke Harada1 (1. Advanced Indus. Sci. and Tech.(Japan), 2. Fuji Electric Corp. Ltd.(Japan))