[We-3A] Diodes and Processing

[We-3A-05] Vertical and Lateral 4H-SiC Charge Compensation Devices Fabricated by Energy Filter Ion Implantation

Julietta Weisse¹, *Constantin Csato², Heinz Mitlehner³, Shavkat Akhmadaliev⁴, Florian Krippendorf², Michael Rueb^5,2, Tobias Erlbacher^3,1 (1. Department of Electron Devices, FAU Univ. Erlangen-Nürnberg, Erlangen, Germany(Germany), 2. mi2-factory GmbH Indus., Jena, Germany(Germany), 3. Fraunhofer IISB Inst., Erlangen, Germany(Germany), 4. Helmholtz-Zentrum Dresden-Rossendorf Inst., Dresden, Germany(Germany), 5. Ernst-Abbe-Hochschule Jena Univ., Jena, Germany(Germany))