ICSCRM2019

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Oral Presentation

Power and High-Frequency Devices

[We-3A] Diodes and Processing

Wed. Oct 2, 2019 1:45 PM - 3:45 PM Room A (Kyoto International Conference Center)

3:00 PM - 3:15 PM

[We-3A-06] Effects of Hole Density and Current Density on Dislocation Glide Velocity in 4H-SiC

*Yusuke Yamashiro1, Teruaki Kumazawa1, Mariko Hayashi1, Masakazu Baba1, Manabu Takei2, Shinsuke Harada1, Yoshiyuki Yonezawa1, Hajime Okumura1 (1. AIST(Japan), 2. Fuji Electric Corp., Ltd.(Japan))