ICSCRM2019

講演情報

印刷

Oral Presentation

Power and High-Frequency Devices

[We-3A] Diodes and Processing

2019年10月2日(水) 13:45 〜 15:45 Room A (Kyoto International Conference Center)

15:00 〜 15:15

[We-3A-06] Effects of Hole Density and Current Density on Dislocation Glide Velocity in 4H-SiC

*Yusuke Yamashiro1, Teruaki Kumazawa1, Mariko Hayashi1, Masakazu Baba1, Manabu Takei2, Shinsuke Harada1, Yoshiyuki Yonezawa1, Hajime Okumura1 (1. AIST(Japan), 2. Fuji Electric Corp., Ltd.(Japan))