ICSCRM2019

講演情報

印刷

Oral Presentation

Characterization and Defect Engineering

[We-3B] Fundamental Physics and Measurement Techniques

2019年10月2日(水) 13:45 〜 15:45 Annex Hall 2 (Kyoto International Conference Center)

15:15 〜 15:30

[We-3B-06] Lifetime limiting substrate originated deep level defects in 4H-SiC epilayers

*Juergen Erlekampf1, Birgit Kallinger1, Mathias Rommel1, Patrick Berwian1, Jochen Friedrich1, Tobias Erlbacher1 (1. Fraunhofer IISB, Schottkystr. 10, 91058 Erlangen(Germany))