[We-P] Poster Presentation

[We-P-22] Effect of Oxygen Annealing on the Characteristics of isotype n-Ga₂O₃/4H-SiC heterojunction diodes

*Youngjae Lee¹, Sang-mo Koo¹, Wooyoung Son¹, Wook Bang², Junghyen Moon² (1. Kwangwoon Univ.(Korea), 2. Korea Electrotechnology Research Inst.(Korea))