Schedule 4 4:15 PM - 6:15 PM [We-P-22] Effect of Oxygen Annealing on the Characteristics of isotype n-Ga2O3/4H-SiC heterojunction diodes *Youngjae Lee1, Sang-mo Koo1, Wooyoung Son1, Wook Bang2, Junghyen Moon2 (1. Kwangwoon Univ.(Korea), 2. Korea Electrotechnology Research Inst.(Korea))
