2019年10月2日(水) 16:15 〜 18:15Annex Hall 1 (Kyoto International Conference Center)
スケジュール
2
16:15 〜 18:15
[We-P-23] Fabrication and Properties of AlN/4H-SiC Schottky Barrier Diodes
*Seong-Ji Min1, Dong-Hyeon Kim1, Hong-Ki Kim2, Seongjun Kim2, Nam-Suk Lee2, Hoon-Kyu Shin2, Sang-mo Koo1(1. Kwangwoon Univ.(Korea), 2. National Institute for Nanomaterials Technology, Pohang University of Science and Technology (POSTECH)(Korea))