[We-P] Poster Presentation

[We-P-30] Analysis of three-level charge pumping characteristics of 4H-SiC MOSFETs considering near-interface traps

*Yuta Matsuya¹, Xufang Zhang¹, Dai Okamoto¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1. Univ. of Tsukuba(Japan))