Schedule 3 4:15 PM - 6:15 PM [We-P-34] Development of SiC etching by chlorine monofluoride gas *Yoshinao Takahashi1,2, Korehito Kato2, Hitoshi Habuka1 (1. Yokohama National Univ.(Japan), 2. KANTO DENKA KOGYO CO., LTD.(Japan))
