[We-P] Poster Presentation

[We-P-35] Deposition of Gate Oxide for SiC Trench MOSFET with Thick SiO₂ in the Trench Bottom

*Takayuki Kobayashi¹, Masayuki Nakamura¹, Masahiro Furuta¹, Yutaka Kusuda¹, Shin-ichi Motoyama¹ (1. Samco Inc.(Japan))