[We-P] Poster Presentation

[We-P-42] Experimental Analysis of 600V 4H-SiC Vertical and Lateral MOSFETs Fabricated on the same 6-inch Substrate using a Single Process

*Nick Yun¹, Justin Lynch¹, Woongje Sung¹ (1. State University of New York Polytechnic Inst. Colleges of Nanoscale Science and Engineering(United States of America))