[We-P] Poster Presentation

[We-P-44] Enhancement of ESD Protection using Wide-trench Structure in 650 V 4H-SiC Junction Barrier Schottky Diode

*Sinsu Kyoung¹, Eun-ha Kim¹, Joon-hyeok Jeon^1,2, Tae Jin Nam¹, Young Sung Hong¹, Tai Young Kang¹ (1. Powercubesemi, Inc.(Korea), 2. Hanyang Univ.(Korea))