スケジュール 3 16:15 〜 18:15 [We-P-47] 1200 V and 4000 V SiC DMOSFETs *Siddarth Sundaresan Sundaresan1, Jaehoon Park1, Vamsi Mulpuri1, Ranbir Singh1 (1. GeneSiC Semiconductor(United States of America))