[We-P] Poster Presentation

[We-P-53LN] Mechanism of improvement in channel mobility of SiC-MOSFET by wet post-oxidation annealing studied using ion beam analysis techniques

*Kaoru NAKAJIMA¹, Takuya MATSUMOTO¹, Kenji KIMURA¹, Mizuki NISHIDA², Koji KITA² (1. Kyoto Univ.(Japan), 2. The Univ. of Tokyo(Japan))