[We-P] Poster Presentation

[We-P-55LN] High Temperature Reliability of 4H-SiC Devices and Single Stage 4H-SiC MOSFET Amplifier at 400ºC

*Cuong Van Vuong¹, Seiji Ishikawa², Tomonori Maeda², Hiroshi Sezaki², Kousuke Muraoka¹, Tetsuya Meguro¹, Shin-Ichiro Kuroki¹ (1. Hiroshima University(Japan), 2. Phenitec Semiconductor Co ,Ltd(Japan))