Top-Gate Oxide TFTs with Ion-Implanted Source/Drain Regions in Advanced LTPS Technology

Isao Suzumura

doi:https://doi.org/10.36463/idw.2019.0472

11:30 AM - 11:55 AM

[AMD6-3(Invited)] Top-Gate Oxide TFTs with Ion-Implanted Source/Drain Regions in Advanced LTPS Technology

*Isao Suzumura¹, Toshihide Jinnai¹, Hajime Watakabe¹, Akihiro Hanada¹, Ryo Onodera¹, Tomoyuki Ito¹ (1. Japan Display Inc. (Japan))

Top-gate, Self-aligned, Oxide TFT, Short channel length, Ion implantation

https://doi.org/10.36463/idw.2019.0472

This study develops advanced LTPS TFT technology with top-gate self-aligned oxide TFTs using Generation 6 mother glass. Source and drain regions of the oxide TFTs are formed by ion implantation through a gate insulator with a gate metal mask. The optimized oxide TFTs demonstrates good short-channel performance.

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[AMD6-3(Invited)] Top-Gate Oxide TFTs with Ion-Implanted Source/Drain Regions in Advanced LTPS Technology