The 26th International Display Workshops (IDW '19)

Presentation information

Poster Presentation

[AMDp1] Oxide TFTs

Thu. Nov 28, 2019 10:40 AM - 1:10 PM Main Hall (1F)

10:40 AM - 1:10 PM

[AMDp1-14] Effect of Mo and MoTi Serving as a Barrier Layer for Cu Source/Drain Electrodes on Performances of Amorphous Silicon and IGZO TFTs

*Chuanbao Luo1, Qianyi Zhang1, Ziran Li1, Xuechao Ren1, Xiaolong Meng1, Dai Tian1, Bisheng Mo1, Xiaohu Wei1, Xialiang Yuan1, Shijian Qin1 (1. Shenzhen China Star Optoelectronics Technology Co., Ltd (China))

Keywords: Cu diffusion, Barrier layer, Electrical characteristics, TOF-SIMS

The research reveals the effect of Mo and MoTi film on the suppression of Cu diffusion for BCE structure of a-Si and a-IGZO devices during severe thermal process. Electrical characters depict that a-IGZO film is superior to a-Si for suppressing Cu diffusion, resulting from untraceable Cu signal in ToF-SIMS.