Session information

Oral Presentation

[AMD5] Oxide TFT: Device Fundamentals

Fri. Nov 29, 2019 9:00 AM - 10:30 AM Mid-sized Hall B (1F)

Chair: Kazumasa Nomoto (Sony)
Co-Chair: Hideya Kumomi (Tokyo Tech.)

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9:00 AM - 9:25 AM

[AMD5-1(Invited)] Switching Characteristic Enhancement of P-type Cu₂O TFTs

Dongwoo Kim¹, I Sak Lee¹, Sujin Jung¹, Sung Min Rho¹, *Hyun Jae Kim¹ (1. Yonsei University (Korea))

9:25 AM - 9:50 AM

[AMD5-2(Invited)] High Mobility Metal-Oxide Devices for Display SoP and 3D Brain-Mimicking IC

*Albert Chin¹, Te Jui Yen¹, Cheng Wei Shih¹, You-Da Chen¹ (1. National Chiao Tung University (Taiwan))

9:50 AM - 10:10 AM

[AMD5-3] High Mobility Oxide TFT Based on In-rich In-Ga-Sn-O Semiconductors with Nanocrystalline Structures

*XUERU MEI², HUAFEI XIE¹, NIAN LIU², MACAI LU², Lei Wen², Shujhih Chen², Shengdong Zhang², Chiayu Lee², Xin Zhang² (1. Peking University (China), 2. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd (China))

10:10 AM - 10:30 AM

[AMD5-4] Simulation Study of Self-Heating and Edge Effects on Oxide-Semiconductor TFTs: Channel-Width Dependence

*Katsumi Abe¹, Kazuki Ota¹, Takeshi Kuwagaki¹ (1. Silvaco Japan Co., Ltd. (Japan))

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