Oral Presentation

[AMD7] Oxide TFT: Fabrication Process

2019年11月29日(金) 13:20 〜 14:40 Mid-sized Hall B (1F)

Chair: Toshiaki Arai (JOLED Inc.)
Co-Chair: Yujiro Takeda (Sharp)

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13:20 〜 13:45

[AMD7-1(Invited)] Nanostructured IGZO thin-film transistors with remarkably enhanced current density and on-off ratio

Kairong Huang¹, *Chuan Liu¹ (1. Sun Yat-sen University (China))

13:45 〜 14:05

[AMD7-2] Effect of Lanthanum Doping on the Electrical Performance of Spray Coated ZnO Thin Film Transistor

*RAVINDRA NAIK BUKKE¹, NARENDRA NAIK MUDE, JEWEL KUMER SAHA, YOUNGOO KIM, JIN JANG (1. KYUNG HEE UNIVERSITY (Korea))

14:05 〜 14:25

[AMD7-3] Highly Stable High Mobility Top-gate Structured Oxide TFT by Supplying Optimized Oxygen and Hydrogen to Semiconductors

*Jong Beom Ko¹, Seung-Hee Lee¹, Sang-Hee Ko Park¹ (1. Korea Advanced Institute of Science and Technology (Korea))

14:25 〜 14:40

[AMD7-4L] Low-Temperature IGZO Technology on Transparent Plastic Foil by Atmospheric Spatial Atomic Layer Deposition

Corné Frijters^1,2, Roy Verbeek¹, Gerard de Haas¹, Tung Huei Ke³, Erwin Vandenplas³, Marc Ameys³, Jan-Laurens van der Steen¹, Gerwin Gelinck^1,4, Eric Meulenkamp¹, Paul Poodt^1,2, Auke Kronemeijer¹, *Ilias Katsouras¹ (1. TNO/Centre (Netherlands), 2. SALDtech B.V. (Netherlands), 3. imec (Belgium), 4. Eindhoven University of Technology (Netherlands))

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