Oral Presentation

[AMD6] Oxide TFT: Device Application

2019年11月29日(金) 10:40 〜 12:15 Mid-sized Hall B (1F)

Chair: Chuan Liu (Sun Yat-sen University)
Co-Chair: Susumu Horita (JAIST)

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10:40 〜 11:05

[AMD6-1(Invited)] High Performance Short Channel Oxide TFTs for Transparent Top Emission OLED TVs

*Chanki Ha¹, Eunah Heo¹, Wonbeom Yoo¹, Heungjo Lee¹, Keun-Yong Ban¹, Jonguk Bae¹, Jongwoo Kim¹ (1. LG Display (Korea))

11:05 〜 11:30

[AMD6-2(Invited)] Development of high mobility top gate IGZO-TFT for Automotive OLED display.

*Yujiro Takeda¹, Aman Mehadi¹, Shogo Murashige¹, Kazuatsu Ito¹, Izumi Ishida¹, Shinji Nakajima¹, Hiroshi Matsukizono¹, Naoki Makita¹ (1. SHARP Corporation (Japan))

11:30 〜 11:55

[AMD6-3(Invited)] Top-Gate Oxide TFTs with Ion-Implanted Source/Drain Regions in Advanced LTPS Technology

*Isao Suzumura¹, Toshihide Jinnai¹, Hajime Watakabe¹, Akihiro Hanada¹, Ryo Onodera¹, Tomoyuki Ito¹ (1. Japan Display Inc. (Japan))

11:55 〜 12:15

[AMD6-4] Fabrication of Top-Gate Self-Aligned Amorphous InGaSnO TFTs with High Mobility

*Nian Liu¹, Huafei Xie², Xueru Mei¹, Macai Lu¹, Lei Wen¹, Shujhih Chen¹, Shengdong Zhang², Chiayu Lee¹, Xin Zhang¹ (1. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co.Ltd., China (China), 2. School of Electronic and Computer Engineering, Peking University, Shenzhen, China (China))

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Workshop on Active Matrix Displays » [AMD6] Oxide TFT: Device Application