2:55 PM - 3:15 PM
[AMD1-4] Positive Bias-Stress Stability of Flexible Amorphous InGaZnO Thin Film Transistors with Double-Stacked Gate Insulators
Keywords:flexible, a-IGZO TFT, Double-stacked Gate Insulator, PBS
Double-stacked gate insulators (SiOx/TaOx) made flexible amorphous InGaZnO thin film transistors more stable under both mechanical bending and positive bias-stress, which was assumed to result from their better neutral plane position and front-channel interface states. A simple model was built to explain this improvement effect.