[AMD1] Foldable Technology of OLED Displays

[AMD1-4] Positive Bias-Stress Stability of Flexible Amorphous InGaZnO Thin Film Transistors with Double-Stacked Gate Insulators

*Chengyuan Dong¹, Guochao Liu¹, Ying Zhang¹, Guofeng Feng¹, Wen Zhang¹ (1. Shanghai Jiao Tong University (China))

キーワード：flexible, a-IGZO TFT, Double-stacked Gate Insulator, PBS

Double-stacked gate insulators (SiOx/TaOx) made flexible amorphous InGaZnO thin film transistors more stable under both mechanical bending and positive bias-stress, which was assumed to result from their better neutral plane position and front-channel interface states. A simple model was built to explain this improvement effect.