The 26th International Display Workshops (IDW '19)

講演情報

Oral Presentation

[AMD6] Oxide TFT: Device Application

2019年11月29日(金) 10:40 〜 12:15 Mid-sized Hall B (1F)

Chair: Chuan Liu (Sun Yat-sen University)
Co-Chair: Susumu Horita (JAIST)

11:30 〜 11:55

[AMD6-3(Invited)] Top-Gate Oxide TFTs with Ion-Implanted Source/Drain Regions in Advanced LTPS Technology

*Isao Suzumura1, Toshihide Jinnai1, Hajime Watakabe1, Akihiro Hanada1, Ryo Onodera1, Tomoyuki Ito1 (1. Japan Display Inc. (Japan))

キーワード:Top-gate, Self-aligned, Oxide TFT, Short channel length, Ion implantation

This study develops advanced LTPS TFT technology with top-gate self-aligned oxide TFTs using Generation 6 mother glass. Source and drain regions of the oxide TFTs are formed by ion implantation through a gate insulator with a gate metal mask. The optimized oxide TFTs demonstrates good short-channel performance.