The 26th International Display Workshops (IDW '19)

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Oral Presentation

[AMD7] Oxide TFT: Fabrication Process

Fri. Nov 29, 2019 1:20 PM - 2:40 PM Mid-sized Hall B (1F)

Chair: Toshiaki Arai (JOLED Inc.)
Co-Chair: Yujiro Takeda (Sharp)

1:45 PM - 2:05 PM

[AMD7-2] Effect of Lanthanum Doping on the Electrical Performance of Spray Coated ZnO Thin Film Transistor

*RAVINDRA NAIK BUKKE1, NARENDRA NAIK MUDE, JEWEL KUMER SAHA, YOUNGOO KIM, JIN JANG (1. KYUNG HEE UNIVERSITY (Korea))

Keywords:Lanthanum, Solution-process, Spray pyrolysis, Thin-film transistor, ZnO

We studied the effect of lanthanum incorporation on the electrical properties of ZnO TFT fabricated by spray pyrolysis. The turn-on voltage (VON) shifts towards 0 V by La doping. Also, Subthreshold swing (SS) decreases significantly from 387 to 251 mV/dec, by incorporation of lanthanum in ZnO.