[AMD7] Oxide TFT: Fabrication Process

[AMD7-2] Effect of Lanthanum Doping on the Electrical Performance of Spray Coated ZnO Thin Film Transistor

*RAVINDRA NAIK BUKKE¹, NARENDRA NAIK MUDE, JEWEL KUMER SAHA, YOUNGOO KIM, JIN JANG (1. KYUNG HEE UNIVERSITY (Korea))

キーワード：Lanthanum, Solution-process, Spray pyrolysis, Thin-film transistor, ZnO

We studied the effect of lanthanum incorporation on the electrical properties of ZnO TFT fabricated by spray pyrolysis. The turn-on voltage (V_ON) shifts towards 0 V by La doping. Also, Subthreshold swing (SS) decreases significantly from 387 to 251 mV/dec, by incorporation of lanthanum in ZnO.