[AMD7] Oxide TFT: Fabrication Process

[AMD7-4L] Low-Temperature IGZO Technology on Transparent Plastic Foil by Atmospheric Spatial Atomic Layer Deposition

Corné Frijters^1,2, Roy Verbeek¹, Gerard de Haas¹, Tung Huei Ke³, Erwin Vandenplas³, Marc Ameys³, Jan-Laurens van der Steen¹, Gerwin Gelinck^1,4, Eric Meulenkamp¹, Paul Poodt^1,2, Auke Kronemeijer¹, *Ilias Katsouras¹ (1. TNO/Centre (Netherlands), 2. SALDtech B.V. (Netherlands), 3. imec (Belgium), 4. Eindhoven University of Technology (Netherlands))

Keywords:spatial atomic layer depositionIGZO, display, thin-film transistors, large-area processing

We use sALD to deposit IGZO and Al₂O₃ layers in top-gated self-aligned TFTs, achieving a low-temperature process flow (≦200^oC). We attain mobility of 8 cm²/Vs and switch-on voltage of -0.1 V for transistors with channel lengths down to 1 μm, enabling a 200 ppi QVGA display on transparent PEN foil.