The 26th International Display Workshops (IDW '19)

講演情報

Oral Presentation

[AMD7] Oxide TFT: Fabrication Process

2019年11月29日(金) 13:20 〜 14:40 Mid-sized Hall B (1F)

Chair: Toshiaki Arai (JOLED Inc.)
Co-Chair: Yujiro Takeda (Sharp)

14:25 〜 14:40

[AMD7-4L] Low-Temperature IGZO Technology on Transparent Plastic Foil by Atmospheric Spatial Atomic Layer Deposition

Corné Frijters1,2, Roy Verbeek1, Gerard de Haas1, Tung Huei Ke3, Erwin Vandenplas3, Marc Ameys3, Jan-Laurens van der Steen1, Gerwin Gelinck1,4, Eric Meulenkamp1, Paul Poodt1,2, Auke Kronemeijer1, *Ilias Katsouras1 (1. TNO/Centre (Netherlands), 2. SALDtech B.V. (Netherlands), 3. imec (Belgium), 4. Eindhoven University of Technology (Netherlands))

キーワード:spatial atomic layer depositionIGZO, display, thin-film transistors, large-area processing

We use sALD to deposit IGZO and Al2O3 layers in top-gated self-aligned TFTs, achieving a low-temperature process flow (≦200oC). We attain mobility of 8 cm2/Vs and switch-on voltage of -0.1 V for transistors with channel lengths down to 1 μm, enabling a 200 ppi QVGA display on transparent PEN foil.