[AMDp1] Oxide TFTs

[AMDp1-1] Improvement in carrier mobility of ZnON transistor by tantalum encapsulation

*Minjae Kim¹, Jae Kyeong Jeong¹ (1. Hanyang Univ. (Korea))

キーワード：Thin-film transistors, Zinc Oxynitride, Tantalum oxide, Encapsulation, Metal-oxynitride semiconductors

The TaOx/ZnON thin-film stack showed a more uniform distribution of nanocrystalline ZnON with an increased stoichiometric anion lattice compared to control ZnON thin-films. Significantly, improved mobility of 89.4 cm2/Vs were achieved for TaOx/ZnON TFTs. This improvement can be explained by the removal and passivation effect of TaOx film on ZnON.