The 26th International Display Workshops (IDW '19)

講演情報

Poster Presentation

[AMDp1] Oxide TFTs

2019年11月28日(木) 10:40 〜 13:10 Main Hall (1F)

10:40 〜 13:10

[AMDp1-1] Improvement in carrier mobility of ZnON transistor by tantalum encapsulation

*Minjae Kim1, Jae Kyeong Jeong1 (1. Hanyang Univ. (Korea))

キーワード:Thin-film transistors, Zinc Oxynitride, Tantalum oxide, Encapsulation, Metal-oxynitride semiconductors

The TaOx/ZnON thin-film stack showed a more uniform distribution of nanocrystalline ZnON with an increased stoichiometric anion lattice compared to control ZnON thin-films. Significantly, improved mobility of 89.4 cm2/Vs were achieved for TaOx/ZnON TFTs. This improvement can be explained by the removal and passivation effect of TaOx film on ZnON.