The 26th International Display Workshops (IDW '19)

講演情報

Poster Presentation

[AMDp1] Oxide TFTs

2019年11月28日(木) 10:40 〜 13:10 Main Hall (1F)

10:40 〜 13:10

[AMDp1-15] Effect of Fluorine Doping on Illumination Stability of Solution-Processed IGZO TFTs

*Kyung-Mo Jung1, Jongsu Oh1, Kyoung-Rae kim1, Eun Kyo Jung1, Jungwoo Lee1, Yong-Sang Kim1 (1. Sungkyunkwan University (Korea))

キーワード:oxide semiconductor, thin-film transistors, fluorine, a-IGZO, passivation

This study investigated the effect of F doping though NBIS comparison between F-doped and conventional IGZO TFTs. The oxygen vacancies in the IGZO layer were reduced and the bandgap of the IGZO was widened by F doping. As a result of this, the illumination stability of F doped-TFTs was improved.