[AMDp1] Oxide TFTs

[AMDp1-18L] Microwave Assisted Amorphous Oxide Thin-Film Transistors with Polymer Gate Dielectrics

*SeongCheol Jang¹, Kihyeon Bae¹, Kyung Jin Lee¹, Hyun-Suk Kim¹ (1. Chungnam National University (Korea))

キーワード：Low-temperature, Microwave annealing, Polymer Dielectric

In this work, a-IGZO TFTs were fabricated at room temperature by the synergistic combination of microwave annealing and polymer gate dielectrics. a-IGZO TFTs were successfully fabricated at room temperature and show good electrical properties and stability.