[AMDp1] Oxide TFTs

[AMDp1-19L] Transparent AMOLED Display Derived by Metal Oxide Thin Film Transistor with Praseodymium Doping

*HUA XU¹, Miao XU², Min Li¹, Lei Wang², Junbiao Peng² (1. Guangzhou New Vision Opto-electronic Technology Co.,Ltd. (China), 2. South China University of Technology (China))

Keywords: thin film transistor, metal oxide, Praseodymium doping, transparent display

Praseodymium-doped indium zinc oxide (Pr:IZO) have been employed as the channel layer of thin film transistors (TFTs). The TFTs with Pr doping exhibited a remarkable suppression of the light induced instability. A negligible photo-response and remarkable enhancement in negative gate bias stress under illumination (NIBS) were achieved in the Pr:IZO TFTs. Meanwhile, the Pr:IZO TFTs showed reasonable characteristics with a high field effect mobility of 18.4 cm2/Vs, SS value of 0.15 V/decade, and I_on/I_off ratio of 10⁹. A prototype of fully transparent AMOLED display was successfully fabricated to demonstrate the potential of Pr-doping TFTs applied in transparent devices.