[AMDp1] Oxide TFTs

[AMDp1-21L] Improved Mobility and Stability of Indium-free Oxide Thin Film Transistor by Metal Capping Layer

*Ji-Min Park¹, Ho-Hyun Nahm², Hyun-Suk Kim¹ (1. Chungnam National University (Korea), 2. Korea Advanced Institute of Science and Technology (Korea))

Keywords:thin film transistors, amorphous oxide semiconductors, BaSnO3, high mobility, stability

In this work, to get better electrical properties, metal capping layer and lift-off lithography process of a new type of Indium-free amorphous thin films and associated thin-film transistors (TFTs) were investigated. As a result, optimized TFTs showed high mobility (>30cm²/Vs) and excellent stability than conventional InZnO TFTs.