[AMDp1] Oxide TFTs

[AMDp1-25L] Photo-induced instability behaviors of IGZO TFTs caused by the reversible charge trapping

*ChangBum Park¹, Ji Xiang Gong ¹, Martin S¹ (1. China Star Optoelectronics Semiconductor Display Technology (China))

キーワード：IGZO transistor (TFT), photo-irradiation, charge trapping

Photo-induced instability phenomena were investigated in IGZO TFT. The photo-responsivity behaviors attributed to the induced gate bias reveal that, resulting from their substantial trapping feature, photo-carriers (electrons and holes) activated in IGZO solid contribute differently to the negative shift Vth of the device. The bidirectional switching behavior under photo-irradiation also clearly indicates that the hysteresis enhancement predominantly comes from the long-lived reversible charge effect (holes) in n-type devices.